论文部分内容阅读
The a-Si∶H films with different thickness smaller than 1 μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce.
The a-Si: H films with different thickness smaller than 1 μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under optimum condition. The effect of different thickness on film properties is analyzed. Results show that, with the increase of the film thickness, the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on / off state first maximize and then reduce.