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本文报道了用水平三温区炉制备高纯砷化镓单晶的工艺和热处理对电学性质的影响。实验结果表明,经适当热处理后的砷化镓单晶的液氮电子迁移率达到了38500屋米~2/伏·秒。用Brooks-Herring公式算出浅施主浓度N_D和总受主浓度N_A并作图,发现能符合于我们早先提出的n型砷化镓的结构缺陷模型,从而对该模型提供了进一步的支持。最后,根据热处理时间对电学性质的影响,对热处理机理进行了初步分析。
In this paper, we report the influence of the process and heat treatment on the electrical properties of high purity GaAs single crystals prepared by the horizontal three temperature zone furnace. The experimental results show that the liquid nitrogen electron mobility of the GaAs single crystals after proper heat treatment reaches 38500m 2 ~ 2 / V · s. The Brooks-Herring formula was used to calculate the shallow donor concentration (N_D) and total acceptor concentration (N_A). The model was found to be consistent with the structural defect model of n-type gallium arsenide (GaAs) that we proposed earlier. Finally, according to the influence of the heat treatment time on the electrical properties, the heat treatment mechanism is analyzed preliminarily.