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Hydrogenated amorphous silicon(a-Si: H)films were deposited on Si(100)andglass substrates by dielectric barrier discharge enhanced chemical vapour deposition(DBD-CVD)in(SiH_4+H_2)atmosphere at room temperature.Results of the thickness measurement,SEM(scanning electron microscope),Raman,and FTIR(Fourier transform infrared spectroscopy)show that with the increase in the applied peak voltage,the deposition rate and network order of the films increase,and the hydrogen bonding configura-tions mainly in di-hydrogen(Si-H_2)and poly hydrogen(SiH_2)n are introduced into the films.TheUV-visible transmission spectra show that with the decrease in SiH_4/(SiH_4+H_2)the thin films’band gap shifts from 1.92 eV to 2.17 eV.These experimental results are in agreement with the theoretic analysis of the DBD discharge.The deposition of a-Si: H films by the DBD-CVD method as reported here for the first timeis attractive because it allows fast deposition of a-Si: H films on large-area low-melting-pointsubstrates and requires only a low cost of production without additional heating or pumpingequipment.
Hydrogenated amorphous silicon (a-Si: H) films were deposited on Si (100) andglass substrates by dielectric barrier discharge enhanced chemical vapor deposition (DBD-CVD) SEM (scanning electron microscope), Raman, and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage, the deposition rate and network order of the films increase, and the hydrogen bonding configura- tions mainly in di- (Si-H 2) and poly hydrogen (SiH 2) n are introduced into the films. UV-visible transmission spectra show that with the decrease in SiH 4 / (SiH 4 + H 2) the thin films’ band gap shifts from 1.92 eV to 2.17 eV These experimental results are in agreement with the theoretic analysis of the DBD discharge. The deposition of a-Si: H films by the DBD-CVD method as reported for the first time attractive because it allows fast deposition of a-Si: H films on large-area low-melting-pointsubstr ates and requires only a low cost of production without additional heating or pumpingequipment.