日本某公司报道,它研究出一种绘制精密亚微米图形的基础技术.应用这项技术,在实验室条件下用聚焦离子束可绘出0.2微米宽的图形.新技术可望应用于容量大于4兆位的存贮器制造. 此技术需要提供100～300千伏电源输出和百分之0.07微米以下的聚焦镓离子束,图形的形成采用X射线、电子束和离子束.目前存在的缺点是精度还不 A Japanese company reported that it has developed a basic technology for drawing sub-micron precision graphics using this technology to create 0.2-micron-wide patterns with focused ion beams under laboratory conditions. The new technology is expected to be used in applications with capacities greater than 4 megabytes of memory, which requires 100 to 300 kV power output and a focused Ga ion beam of 0.07 μm or less, with the formation of X-rays, electron beams and ion beams. Accuracy is not yet