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A density-of-state distribution in pseudo-gap of phosphorus-doped a-Si: H material prepared byglow-discharge method has been measured experimentally by deep level transient spectroscopy. Aminimum value of 7×10~(15) cm~(-3) eV~(-1) has been obtained at the energy of about 0.5 eV below E_c.This physical picture is quite different from the previous one obtained by field effect. Some com-ments on the method and the theoretical analysis are given.
A density-of-state distribution in pseudo-gap of phosphorus-doped a-Si: H material prepared by discharge-discharge method has been measured experimentally by deep level transient spectroscopy. Aminimum value of 7 × 10 ~ (15) cm ~ 3) eV ~ (-1) has been obtained at the energy of about 0.5 eV below E_c.This physical picture is quite different from the previous one obtained by field effect. Some com-ments on the method and the theoretical analysis are given.