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在一单片刻蚀机上,对高压HCl气氛下掺磷多晶硅的反应离子腐蚀进行了广泛的研究。尽管是高压,可各向异性腐蚀和高的腐蚀率都得以同时实现;在无光刻胶图形化的样品上,就栅氧化层而言,获得了极高的选择性。发现了由光刻胶与氧化等离子体反应生成的含碳物质,并推测这些物质是增大带胶样品氧化层腐蚀速率的主要原因。另外,还描述了光学多频谱终端检测器。
In a monolithic etching machine, extensive research has been conducted on reactive ion etching of phosphorus-doped polysilicon under high-pressure HCl atmosphere. Despite the high pressure, both anisotropic and high etching rates are achieved simultaneously; on the non-photoresist patterned samples, a very high selectivity is achieved for the gate oxide. The carbonaceous materials formed by the reaction between the photoresist and the oxidized plasma were found, and it was speculated that these materials were the main reasons for increasing the corrosion rate of the oxide layer of the sample. In addition, an optical multi-spectrum terminal detector is also described.