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对新型半导体器件——双注入结型场效应管的电流－电压特性进行了详细分析，并得出解析表达式，为该器件的设计和应用提供了理论依据。
The current-voltage characteristics of a new type of semiconductor device, a dual-injection junction field-effect transistor, are analyzed in detail and analytic expressions are obtained, providing a theoretical basis for the design and application of the device.