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研究了采用高频 Plasma CVD技术在较低温度下 (30 0— 40 0℃ )生长以 Ga N为基的 - 族氮化物的可行性 ,在蓝宝石衬底上生长了 Ga N缓冲层 .热处理后的光致发光谱和 X光衍射表明 ,生长的 Ga N缓冲层为立方相 ,带边峰位于 3.15 e V.在作者实验的范围内 ,最优化的 TMGa流量为 0 .0 8sccm (TMAm=10 sccm时 ) ,XPS分析结果表明此时的 Ga/ N比为 1.0 3.这是第一次在高 / 比下得到立方 Ga N.相同条件下石英玻璃衬底上得到的立方 Ga N薄膜 ,黄光峰很弱 ,晶体质量较好
The feasibility of growing Ga-based nitrides using high-frequency plasma CVD at a relatively low temperature (30 0-40 ° C) was studied, and a Ga N buffer layer was grown on a sapphire substrate. After heat treatment Photoluminescence spectra and X-ray diffraction showed that the growth of GaN buffer layer is cubic phase, with a peak edge located at 3.15 e V. In the experimental range, the optimal TMGa flow rate of 0.08sccm (TMAm = 10 sccm), XPS analysis results show that the Ga / N ratio at this time is 1.0 3. This is the first cubic Ga at the high / the ratio obtained under the same conditions GaN film on the quartz glass substrate, Huang Guangfeng Very weak, good crystal quality