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本文在室温下制备了无结结构的低压氧化铟锌薄膜晶体管,并研究了氧分压对其稳定性的影响.氧化铟锌无结薄膜晶体管具有迁移率高、结构新颖等优点,然而氧化物沟道层易受氧、水分子等影响,造成稳定性下降.在室温下,本文通过改变高纯氧流量制备氧化铟锌透明导电薄膜作为沟道层、源漏电极,分析了氧压对于氧化物无结薄膜晶体管稳定性的影响.为使晶体管在低电压(<2V)下工作,达到低压驱动效果,本文采用具有双电层效应和栅电容大的二氧化硅纳米颗粒膜作为栅介质;通过电学性能测试,制备的晶体管工作电压仅为1V、开关电流比大于106、亚阈值斜率小于100mV/decade以及场效应迁移率大于20cm2/V.s.实验研究表明,通氧制备的氧化铟锌薄膜的电阻率会上升,导致晶体管的阈值电压向正向漂移,最终使晶体管的工作模式由耗尽型转变为增强型.
In this paper, a low-voltage indium-zinc-oxide thin film transistor with no junction structure is prepared at room temperature, and the effect of partial pressure of oxygen on its stability is studied. The indium zinc oxide thin-film transistor has the advantages of high mobility and novel structure, Channel layer susceptible to oxygen, water molecules, resulting in decreased stability at room temperature, this paper by changing the flow of high pure oxygen indium zinc oxide transparent conductive film as the channel layer, the source and drain electrodes, the analysis of oxygen pressure for oxidation In order to make the transistor work under low voltage (<2V) and achieve the low voltage driving effect, we use the SiO2 nano-film with double electric layer effect and large gate capacitance as the gate dielectric. Through the electrical performance test, the prepared transistor working voltage is only 1V, the switching current ratio is greater than 106, the subthreshold slope is less than 100mV / decade and the field effect mobility is greater than 20cm2 / Vs. Experimental results show that the resistance of the indium zinc oxide thin film prepared by oxygen The rate will rise, leading to the transistor’s threshold voltage drift to the positive, the final transistor mode of operation from the depletion mode to enhanced.