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一、引言半导体材料的杂质浓度分布是器件制造的一个重要参数,GaAs体效应器件对这一参数的要求特别突出。目前广泛使用的C—V方法,被用来测量半导体材料的浓度分布。但这种方法,需经过麻烦的逐点计算,测量速度慢,分辩率、准确度都比较差,不能满足工作要求。现在我们采用的方法是参考文献(1)设计的,用一恒定的射频小电流来激励在半导体表面上的肖特基二极管,并且改变加在二极管上的直流偏压,来改变耗尽区深度,利
I. INTRODUCTION The impurity concentration distribution of semiconductor materials is an important parameter of device manufacturing. The requirements of GaAs body effect devices for this parameter are particularly outstanding. The currently widely used C-V method is used to measure the concentration distribution of semiconductor materials. However, this method requires a bit by bit calculation trouble, the measurement speed is slow, the resolution, the accuracy is relatively poor, can not meet the job requirements. The method we are now using is that of reference (1), which excites a Schottky diode on the surface of the semiconductor with a constant rf current and changes the dc bias applied to the diode to change the depth of the depletion region Lee