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引言目前,低背景条件下工作的高性能光电红外传感器的发展方向正逐渐趋向于由本征探测器材料和焦平面硅多路调制器组成的混合焦平面器件。在以分立光电二极管探测器/前放结构为基础的焦平面器件中,为达到背景限性能,对探测器的要求极为严格,这往往也就是要求背景散粒噪声远大于热产生暗电流散粒噪声。一些文章所研究的混合IRCCD中的二极管在零偏时达不到背景限性能要求。本文将研究零偏时满足最低背景限性能要求(R_0A要求)的二极管阵列,并研究对二极管的工作特性可能有些什么附加的要求。这些附加要求可能要使二极管在工作状态下的R_0A比零偏R_0A大几个数量级。这类较高的动态阻抗常由对二极管加反偏来实现。这就把对阻抗的要求转变为对漏电流或隧道电流的要求,以使二极管能在足够的反偏范围内满意地工作。
Introduction At present, the development direction of high performance photoelectric infrared sensors operating under low background conditions is gradually moving toward a hybrid focal plane device composed of intrinsic detector material and focal plane silicon multiplexer. In a focal plane device based on a discrete photodiode detector / preamplifier architecture, the detector requirements are extremely stringent to achieve background limiting, which often means that the background shot noise is much greater than the heat generated dark current shot noise. The diodes in hybrid IRCCDs studied in some articles do not meet the background limit requirement at zero offset. This article looks at diode arrays that meet the minimum background capability requirement (R_0A requirement) at zero offset and explores additional requirements that may exist for diode operating characteristics. These additional requirements may make the diode R_0A in working condition several orders of magnitude larger than the zero offset R_0A. Such a higher dynamic impedance often by reverse biased diode to achieve. This translates the requirement for impedance into a requirement for leakage or tunneling current to allow the diode to operate satisfactorily with sufficient range of reverse biases.