为提高ＧａＡｓＭＥＳＦＥＴ静电放电失效阈值，通过ＥＳＤ实验前、后直流参数和热分布变化获取不足１０％的器件表现为永久性失效，而９０％以上的器件表现为潜在性失效的结果。潜在性失效机理为：在强电场、大电流及ｎｓ级瞬时冲击下，辅之以电热迁移和扩散，致使ＧａＡｓＭＥＳＦＥＴ肖特基势垒受到不同程度损伤，Ｇ－Ｓ、Ｇ－Ｄ间的界面离化或击穿。研究其潜在性失效机理，找出在设计、工艺和材料上的缺陷，以提高器件抗静电能力． In order to improve the GaAsMESFET ESD failure threshold, devices with less than 10% of the change in DC parameters and thermal distributions before and after the ESD experiment show permanent failure, while over 90% of the devices exhibit potential failure. Potential failure mechanism is as follows: Under the transient impact of strong electric field, high current and ns, supplemented by electrothermal migration and diffusion, the Schottky barrier of GaAsMESFET is damaged to some extent, and the interface between G-S and G-D Or breakdown. Investigate its potential failure mechanism to identify defects in design, process and materials to improve the antistatic ability of the device.