Ｋ吸附层的存在能促进ＧａＡｓ（１００）表面在室温下的氮化．光电发射测量为此提供了证据．在将Ｋ／ＧａＡｓ（１００）暴露于纯氮以后，价带和芯能级谱均会出现显著变化：功函数有一定程度回升，价带谱中显露Ｎ２ｐ峰，Ｇａ２ｐ和Ａｓ２ｐ芯能级谱中产生化学位移分量．就所研究的三种不同的Ｋ覆盖度（１／４，１／２和１ＭＬ）而言，１ＭＬ的那种显示了最强的促进作用． The presence of K adsorbed layers facilitates the nitridation of GaAs (100) surfaces at room temperature. Photoemission measurements provide evidence for this. After K / GaAs (100) was exposed to pure nitrogen, both the valence band and the core energy spectrum showed significant changes: the work function rebounded to a certain extent, N2p peak appeared in the valence band spectrum, and Ga2p and As2p core energy spectrum A chemical shift component is produced. For the three different K coverage (¼, ½, and 1 ML) studied, 1 ML showed the strongest enhancement.