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一、前言早先生产的场效应晶体管(FET),实际上是一种平面器件,因而只限于小功率应用。后来经过长期努力,研究出先进的VMOS(Ver-tical Metal Oxide Semiconductor)技术,利用一个以扩散制成的沟道和垂直导电原理,使FET承受电压、电流的能力大大提高。1976年,Siliconix公司首先研制出实用的大功率场效应管VMOSFET。随着技术的不断完善,目前已能生产漏极电流为200A、漏源电压为60V的VMOS管。VMOS管有许多超过一般晶体管的优点,特别是在大功率应用场合,例如在快速开关、开关电源、高保真音频放大、射频功率放大、
First, the preface Earlier produced field-effect transistor (FET), is actually a planar device, which is limited to low-power applications. Later, after long-term efforts to develop advanced VMOS (Ver-tical Metal Oxide Semiconductor) technology, the use of a channel made of diffusion and vertical conduction principle, FET to withstand voltage and current capabilities greatly enhanced. In 1976, Siliconix first developed a practical high-power FET VMOSFET. With the continuous improvement of technology, it has been able to produce VMOS with a drain current of 200A and a drain-source voltage of 60V. VMOS transistors have many advantages over conventional transistors, especially in high-power applications such as fast switching, switching power supplies, high-fidelity audio amplification, RF power amplification,