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本文报道用真空热蒸发淀积非晶态硒化镉薄膜,研究淀积基底温度及退火处理对薄膜光电特性的影响。光谱实验表明吸收边有随基底温度降低而向长波方向移动的现象,发现淀积基底温度为150℃的样品其光电导与暗电导的比率最高。用超短序列光脉冲对薄膜的瞬态光电导特性进行研究,表明非晶态硒化镉薄膜对ps级超短光脉冲具有良好的瞬态响应,可用作快速光电探测器的光敏材料薄膜。
This paper reports the deposition of amorphous cadmium selenide film by vacuum thermal evaporation to study the effects of deposition substrate temperature and annealing treatment on the photoelectric properties of the films. Spectral experiments show that the absorption edge moves toward the longwave as the substrate temperature decreases. It is found that the ratio of photoconductivity to dark conductance is the highest at a substrate temperature of 150 ℃. The transient photoconductive properties of thin films were investigated by using ultrashort sequence light pulse. The results show that the amorphous CdSe films have good transient response to ultra-short pulses of ps order and can be used as photo-sensitive materials for fast photodetectors .