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本文叙述了一种测量发光二极管(LED)和激光器的载流子寿命的新方法。这种改进的方法不但准许有益于载流子寿命的其他过程测量,而且准许首先测量辐射复合系数B(n)的载流子关系。观察到B的载流子关系与Stern模式极好一致。从实验数据获得的掺杂水平同生长溶液组份的计算值很符合。因此,这种方法对确定有源层掺杂浓度提供了一种可靠的新方法。通过观察叠加在200ns偏置脉冲Ⅰ上的小
This article describes a new method for measuring the carrier lifetime of light emitting diodes (LEDs) and lasers. This improved method not only allows for other process measurements that are beneficial to carrier lifetime, but also permits first measurement of the carrier relationship of the radiation recombination coefficient B (n). It is observed that the carrier relationship of B is in excellent agreement with the Stern mode. The doping level obtained from the experimental data is in good agreement with the calculated value of the growth solution component. Therefore, this method provides a reliable new method for determining the doping concentration of the active layer. By observing the small superimposed on the 200ns bias pulse I