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用 MBE 法实现了无孪晶 InAs 外廷生长、基底为 GaAs(111)B,取向偏差0.5°。外延层厚2μm,其 X 射线回摆曲线的半高宽为200弧秒。在 InAs 生长过程中,其反射式高能电子衍射(RHEED)图形为条纹,无额外斑点出现。而生长
MBE method has been used to realize the growth of twinned InAs non-epitaxial wafers. The substrate is GaAs (111) B with a misorientation of 0.5 °. The epitaxial layer has a thickness of 2 μm and has a full-width half-width of 200 arcsec for its X-ray rocking curve. In InAs growth process, the reflection of high energy electron diffraction (RHEED) pattern of stripes, no additional spots appear. And grow