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用一个与 AsCl_3、Ga、H_2方法相似的新的卤化物输运法生长了高阻掺铬外延缓冲层。在改善表面性能和控制由铬引起的生长缺陷方面显示出了良好效果。可重复地获得薄层电阻大于10~9Ω/□的外延层。通过850℃下的退火试验对掺铬外延层的热稳定进行了估价。讨论了包括利用 CrO_2-Cl_2、CrO_3、Cr(CO)_6和 CrCl_2等试剂输运铬的各种反应。给出了由二次离子质谱测量(SIMS)的缓冲层和缓冲层-有源结构中铬浓度的分布数据。对利用光感应瞬态电流光谱学测量的这些外延层的电学性质也进行了讨论。
A high-resistance chromium-doped epitaxial buffer layer was grown by a new halide transport method similar to the AsCl 3, Ga and H 2 methods. Showed good results in improving surface properties and controlling growth defects caused by chromium. An epitaxial layer having a sheet resistance of more than 10? 9? /? Is obtained repeatedly. The thermal stability of the Cr-doped epitaxial layer was evaluated by annealing at 850 ℃. Various reactions involving the transport of chromium using reagents such as CrO_2-Cl_2, CrO_3, Cr (CO) _6 and CrCl_2 were discussed. The distribution data of chromium concentration in buffer and buffer-active structures by SIMS are given. The electrical properties of these epitaxial layers, measured using light-induced transient current spectroscopy, are also discussed.