高精度、高稳定性氮化钽薄膜电阻器,是先在二极阴极溅射钽的同时,向真空室内充入适当量的氮气,进行反应溅射而获得氮化钽膜,再经过热处理和阻值调整后而制得的。实践表明,严格控制制作工艺过程中的氮气分压,使之生成具有一定氮-钽原子比值的薄膜,是制备优质氮化钽薄膜电阻器的关键之一。 High-precision, high-stability tantalum nitride thin film resistor is first tantalum cathode sputtering in the same time, the vacuum chamber filled with a suitable amount of nitrogen, reactive sputtering to obtain a tantalum nitride film, and then heat treatment and Resistance adjusted and made. Practice shows that strict control of the production process nitrogen partial pressure, so that the formation of a certain nitrogen - tantalum atomic ratio of the film, is the preparation of high-quality tantalum nitride thin film resistors one of the keys.