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一、引言低能(<5KeV)大面积(束径几厘米以上)离子束技术,是利用离子与固体表面的一些相互作用过程如溅射、低能注入、激活反应、表面织构、碰撞混合和相变等发展起来的新技术。主要内容包括刻蚀加工、薄膜生长和材料改性。自1953年首次利用离子束溅射减薄透射电镜观察用样品、特别是1965年刻蚀出0.25微米的金—铂超精细线条和美国航宇局路易斯研究中心把大面积考夫曼型离子源用于微电子器件的各种溅射工艺以来,这些技术得到了迅速发展和广泛应用。目前它已成为发展大规模、超大规模集成电路和其
I. INTRODUCTION Low energy (<5KeV) ion beam technology with a large area (beam diameter of several centimeters) utilizes the interaction between ion and solid surface such as sputtering, low energy injection, activation reaction, surface texture, collision mixing and phase Change and other new technologies developed. The main contents include etching, film growth and material modification. For the first time since 1953, ion beam sputtering was used to reduce TEM observation samples, especially the gold-platinum ultra-fine lines of 0.25 μm etched in 1965 and the NASA Lewis Research Center. Large-area Kaufman-type ion sources Since the various sputtering processes for microelectronic devices, these technologies have been rapidly developed and widely used. At present it has become the development of large-scale, very large scale integrated circuits and their