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据《应用机械工学》第25卷第5号报导,日本的日立研究所试制成功一种新的铜—石墨复合材料,通过调整石墨的混合量;可以在2×16~(6)-12×10~6/℃范围内选择热膨胀率。 这种材料可代替铜来制造半导体的电极基体……,该材料通过热处理解决了因铜和石墨的热膨胀不同而产生的不稳定性,使得石墨纤维在纵横两个方向上的热膨胀率变得相等,因而,用于半导体电极时,可满足接触硅片的电极面所需要的等向性。此外,可
According to Journal of Applied Mechanics, Vol. 25, No. 5, Japan’s Hitachi Institute successfully developed a new copper-graphite composite material by adjusting the amount of graphite mixed in the range of 2 × 16 to (6) -12 × 10 ~ 6 / ℃ range of thermal expansion rate. This material can be used in place of copper to fabricate a semiconductor electrode substrate ... which solves the instability caused by the thermal expansion of copper and graphite by heat treatment so that the thermal expansion coefficients of graphite fibers in both longitudinal and lateral directions become equal Therefore, when used in a semiconductor electrode, the isotropy required for contacting the electrode surface of the silicon wafer can be satisfied. In addition, yes