论文部分内容阅读
基于k·p微扰理论,通过引入应变哈密顿量作为微扰,建立了双轴应变Ge/Si_(1-x)Ge_x价带色散关系模型.模型适于任意晶向弛豫Si_(1-x)Ge_x虚衬底上的应变Ge价带结构,通过该模型可获得任意k方向应变Ge的价带结构和空穴有效质量.模型的Matlab模拟结果显示,应变Ge/Si_(1-X)Ge_x价带带边空穴有效质量随Ge组分的增加而减小,其各向异性比弛豫Ge更加显著.本文研究成果对Si基应变Ge MOS器件及集成电路的沟道应力与晶向的设计有参考价值.
Based on the k · p perturbation theory, a model of biaxial strained Ge / Si_ (1-x) Ge_x valence band dispersion was established by introducing strain Hamiltonian as perturbation.The model is suitable for the relaxation of Si_ (1- x) strain Ge valence band structure on Ge_x virtual substrate, the valence band structure and hole effective mass of any k-direction strain Ge can be obtained by this model.The Matlab simulation results show that the strain of Ge / Si_ (1-X) The effective mass of Ge_x valence band edge decreases with the increase of Ge composition, and its anisotropy is more significant than that of relaxed Ge. The research results of this dissertation are focused on the channel stress and crystal orientation of Si-based strained Ge MOS devices and integrated circuits The design of a reference value.