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近年来,日本革新芯片生产技术成绩显著,其中不少在世界芯片制造业中已达到领先水平,日本的芯片生产技术日益受到世界各国的密切注视。东芝电气公司最近改进了传统的砷化镓拉晶技术,提高了砷化镓晶片性能,降低生产成本。通常在制取砷化镓晶片时,坯材在放入坩埚和从坩埚中取出时,由于热对流的影响,温度差达15℃,这种温度差将影响砷化镓的工作性能。该公司在坩埚周围放置一个磁场强度高达3400奥斯特的磁体,使上述温度差减少到1℃以内。目前,已用这种方法生产直径7.6厘米的均质砷化镓。
In recent years, Japan has made remarkable achievements in the production of innovative chips, many of which have reached the advanced level in the world’s chip manufacturing industry. Japan’s chip production technology is increasingly being closely watched by all countries in the world. Toshiba Electric recently improved its traditional gallium arsenide crystal pulling technology to improve gallium arsenide chip performance and reduce production costs. Usually in the preparation of gallium arsenide wafers, billets into the crucible and removed from the crucible, due to the impact of thermal convection, the temperature difference of 15 ℃, this temperature difference will affect the performance of gallium arsenide. The company placed a magnetic field strength of up to 3400 Oersteds around the crucible to reduce the temperature difference below 1 ° C. Currently, homogeneous gallium arsenide, 7.6 cm in diameter, has been produced by this method.