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反射率对太阳电池的性能至关重要.采用电化学法在单晶硅衬底上制备多孔硅来降低器件的反射率,并采用快速热退火法对多孔硅层进行磷扩散处理,进而制备了单晶硅太阳电池.扫描电子显微镜(SEM)显示出单晶硅表面形成了孔径均匀的多孔硅层,且孔径随着刻蚀时间的增加而增大;紫外-可见光分光光度计表明,该多孔硅层的反射率在400～1 100 nm的光谱范围达到12％;磷扩散后薄层方块电阻达到42 Ω/□,证明多孔硅层促进了磷扩散.最终在850℃、40 s快速热退火扩散条件下,成功制备出了效率为12.32％、短路电流密度为27.99 mA/cm2、开路电压为0.49 V以及填充因子达到71％的太阳电池.“,”Reflectivity plays an important role to the performances of solar cells.The porous silicon was prepared on the monocrystalline silicon substrates by the electrochemical method to reduce the reflectivity of the devices.Then the phosphorous diffusion was obtained by the rapid thermal annealing method to fabricate monocrystalline silicon solar cells.The images of the scanning electron microscopy (SEM) show that the porous silicon layer with an uniform pore size is formed on the surface of monocrystalline silicon,and the pore size increases with the increase of the etching time.The spectra measured from the ultraviolet-visible spectrophotometer indicate that the reflectivity of the porous silicon layer reaches 12％ within the spectral range of 400-1 100 nm.The sheet resistance decreases as the thickness of porous silicon increases,and reaches 42 Ω/□,which proves that the porous silicon layer promotes the phosphorus diffusion.After rapid thermal phosphorus diffusion at 850 ℃ for 40 s,the porous silicon solar cell was achieved with an efficiency of 12.32％,a short circuit current density of 27.99 mA/cm2,an open circuit voltage of 0.49 V and a filling factor of 71％.