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n型砷化镓单晶(n～10~(15)cm~(-3)电阻率随压力的变化可以应用在压敏元件上。在0～15千巴范围中的流体静压力和明显的非流体静压力环境内发现了(8.0±0.4)×10~(-3)千巴~(-1)的线性压力系数。热敏度大致为(～3×10~(-3)3K~(-1))。使用重掺杂的材料(n～3×10~(18)cm~(-3)时,其热敏度缩减至～10~(-5)K~(-1),可与锰铜压力计相媲美,同时压力系数上升至(25±4)×10~(-3)千巴~(-1)。
The n-type gallium arsenide single crystal (n ~ 10 ~ (15) cm ~ (-3)) resistivity changes with pressure can be applied to the pressure sensitive element.The hydrostatic pressure in the range of 0 ~ 15kPa and the obvious The linear pressure coefficient of (8.0 ± 0.4) × 10 ~ (-3) kPa ~ (-1) was found in the non-hydrostatic environment with the thermal sensitivity of (~ 3 × 10 ~ (-3) 3K ~ -1)). The thermal sensitivity was reduced to ~ 10 ~ (-5) K ~ (-1) when heavily doped materials (n ~ 3 × 10 ~ (18) cm ~ Compared with the manganese copper gauge, the pressure coefficient rises to (25 ± 4) × 10 ~ (-3) kPa ~ (-1).