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We present an AlGaN/GaN high-electron mobility transistor(HEMT) device with both field plate(FP) and lowdensity drain(LDD). The LDD is realized by the injection of negatively charged fluorine(F-) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.
We present an AlGaN / GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and lowdensity drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F-) ions under low power in the With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.