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本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。针对新型薄发射极晶闸管特性改善对薄发射极参数的要求,重点研究了采用不同方法时退火条件对薄发射区掺杂剖面、结深以及杂质总量的影响。管芯研究结果表明,在适当的退火条件下,离子注入掺杂制备浅结是改善器件特性较为理想的方法。
In this paper, polycrystalline silicon film ion implantation doping and diffusion doping prepared shallow emission junction experiment. In order to improve the thin emitter parameters of the new thin-type thyristor, the influence of annealing conditions on the doping profile, the junction depth and the total amount of impurities in the thin emitter region has been studied emphatically. The results of the die study show that the shallow doping by ion implantation doping is an ideal method to improve the device properties under appropriate annealing conditions.