论文部分内容阅读
采用射频磁控反应溅射法在化学气相沉积(chemical vapor deposition,CVD)的金刚石衬底上制备了AlN薄膜以及AlN/Si和AlN/Ge膜。通过X射线衍射分析了衬底加热温度对薄膜微结构的影响和薄膜高温下的氧化行为。结果表明:在衬底加热温度低于380℃时制备的AlN薄膜为非晶态,480℃时AlN薄膜为六方多晶。AlN薄膜在800℃热暴露后开始氧化,900℃时基本被氧化为Al2O3。在CVD金刚石上制备的AlN/Si和AlN/Ge膜都能提高金刚石在长波红外波段(8～10μm)的透过性能,单面最大增透分别为8%和3%。镀有AlN/Ge膜的CVD金刚石在800℃高温热暴露实验中,有AlN/Ge膜保护的金刚石表面未发生刻蚀。高温下AlN/Ge膜对金刚石有很好的保护作用,同时增透效果没有明显下降。
AlN films and AlN / Si and AlN / Ge films were deposited on a diamond substrate by chemical vapor deposition (CVD) by RF magnetron reactive sputtering. The influence of the substrate heating temperature on the microstructure of the film and the oxidation behavior of the film at high temperature were analyzed by X-ray diffraction. The results show that the AlN film prepared at the substrate heating temperature lower than 380 ℃ is amorphous and the AlN film is hexagonal polycrystalline at 480 ℃. AlN film begins to oxidize after 800 ℃ thermal exposure, and is basically oxidized to Al2O3 at 900 ℃. The AlN / Si and AlN / Ge films prepared on CVD diamond can improve the transmission of diamond in the long-wave infrared (8 ~ 10μm), with the maximum surface area of 8% and 3% respectively. CVD diamond coated with AlN / Ge film showed no etching on the diamond surface protected by AlN / Ge film in the 800 ℃ high temperature thermal exposure experiment. High temperature AlN / Ge film diamond has a good protective effect, while the anti-penetration effect did not significantly decrease.