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采用CF4和Ar混合气体研究了新型相变材料Ti0.5Sb2Te3(TST)的刻蚀特性,重点优化和研究了刻蚀气体总流速、CF4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明,当气体总流量为50 sccm、CF4浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时,刻蚀速度达到126 nm/min,TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。
The etching characteristics of Ti0.5Sb2Te3 (TST), a new type of phase change material, were studied by CF4 and Ar mixed gases. The effects of process parameters such as total etching gas velocity, CF4 / Ar ratio, pressure and power on the etching behavior Appearance effect. The results show that when the total gas flow rate is 50 sccm, the concentration of CF4 is 26%, the etching power is 400 W and the etching pressure is 13.3 Pa, the etching rate reaches 126 nm / min. The sidewall of the TST film is flat and Good verticality (close to 90 °), smooth etched surface (RMS 0.82 nm), and etched in-chip uniformity are all very good.