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本文提出了一种用二次离子质谱(SIMS)测定Al_x Ga_(1-x)As薄膜样品成分的定量分析方法,通过对一组标样用线性回归法定标和迭代法定量计算,对不同能量下得到的数据进行统计分析表明,用SIMS方法测定的组份X值与用电子探针测定的结果之间的均方根误差只有8.7。本文还对影响SIMS定量分析精度的某些实验因素作了探讨。并给出了估算Al组分的I(Al~+)/sum from j=1 to nI(M_j~+)～C_(Al)图。原则上本法也同样适用于其它多组分均匀样品的SIMS定量分析。
In this paper, a quantitative analysis method for the determination of Al_x Ga_ (1-x) As thin film samples by SIMS has been proposed. Through a series of standard calibration and iterative method with linear regression, The statistical analysis of the data obtained under this procedure shows that the root mean square error between the value of component X measured by the SIMS method and the result measured by the electron probe is only 8.7. In this paper, some experimental factors that affect the accuracy of SIMS quantitative analysis are also discussed. And the I (Al ~ +) / sum from j = 1 to nI (M_j ~ +) ~ C_ (Al) plot of the estimated Al component is given. In principle, this method is equally applicable to SIMS quantitative analysis of other multicomponent homogeneous samples.