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超纯SiHCl_3是研制高纯硅的重要原料。对纯度分析要求很高。本文提出,在适当条件下使SiHCl_3主体挥发、富集其中杂质,然后阳极溶出,伏安法测定,该法简便,分析灵敏度达10~(-8)—10~(-9)%数量级。本文研究了杂质在SiHCl_3挥发过程的某些规律;探讨了金属杂质Bi、Cu、Pd、Cd、In同主体挥发分离的最佳条件;设计了较合理的加料回收实验方案;并用经改进的水解法验证。实验结果指出:分析SiHCl_3所含某些金属杂质(例如Cu、Pd)本法不仅可行,而且分析灵敏
Ultra-pure SiHCl_3 is an important raw material for the development of high-purity silicon. High purity analysis. In this paper, the main body of SiHCl 3 is volatilized under appropriate conditions, and the impurities therein are enriched, then anodic stripping and voltammetric determination. The method is simple and convenient, and the analytical sensitivity is in the order of 10 -8 -10 -9%. In this paper, we study some rules of the impurities in SiHCl_3 volatilization process, explore the optimal conditions for volatile separation of metal impurities such as Bi, Cu, Pd, Cd and In with the host, design a more reasonable experimental program of feeding recovery, Solution verification. The experimental results show that it is not only feasible to analyze some metal impurities (such as Cu, Pd) contained in SiHCl_3, but also analytical sensitivity