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使用CCl_2F_2和He组成的腐蚀气体对GaAs-Al_xGa_(1-x)As(x=0.3)的选择性干法腐蚀进行了研究。腐蚀是在气体成份比P_(CCl_2F_2)/P_(HE)大于0.25、总压力为0.5～5.0Pa、功率密度为0.18～0.53W/cm~2的条件下进行的,在气体成份比P_(CCl_2F_2)/P_(He)=1、工作压力5Pa,功率密度0.18W/cm~2情况下,获得超过200的高选择速率比和规则的腐蚀剖面图形。在上述条件下,GaAs的腐蚀图形呈现出近乎垂直壁特征。
The selective dry etching of GaAs-Al_xGa_ (1-x) As (x = 0.3) was studied using the etching gas consisting of CCl_2F_2 and He. The corrosion is carried out under the condition of gas composition ratio P CCl 2 F 2 / P HE greater than 0.25, total pressure 0.5-0.5 Pa and power density 0.18-0.53 W / cm 2, and the gas composition ratio P CCl 2 F 2 ) / P_ (He) = 1, operating pressure 5Pa, power density 0.18W / cm ~ 2, a high selectivity rate ratio of over 200 and a regular corrosion profile are obtained. Under the above conditions, the corrosion patterns of GaAs exhibit nearly vertical wall features.