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This paper investigated the radical behaviour of the plasma of a mixture of methane (CH_4)and decamethylcyclopentasiloxane(DMCPS)by optical emission spectroscopy.The plasma was generated by electron cyclotron resonance(ECR)discharge and was used for depositing porous SiCOH low dielectric-constant film.In the ECR discharge plasma,CH,H,H_2,C_2,Si,0 and SiO radicals were obtained.The CH,H and C_2 radicals were from the dissociation of CH_4,while the SiO,Si and O radicals from the dissociation of the Si-O chain.CH_x radicals absorbed in the film were thermally unstable and could be removed by annealing.The dissociation of the Si-O chain led to an increase in a ratio of the Si-O_(cage)to Si-O_(network).The removed of CH_x radicals and the increased Si-O_(cage)to Si-O_(network)ratio were beneficial for reducing the film density and dielectric constant.
This paper investigated the radical behavior of the plasma of a mixture of methane (CH 4) and decamethylcyclopentasiloxane (DMCPS) by optical emission spectroscopy. The plasma was generated by electron cyclotron resonance (ECR) discharge and was used for depositing porous SiCOH low dielectric constant In the ECR discharge plasma, CH, H, H_2, C_2, Si, O and SiO radicals were obtained. The CH, H and C_2 radicals were from the dissociation of CH_4, while the SiO, Si and O radicals from the dissociation of the Si-O chain. CHx fractions absorbed in the film were thermally unstable and could be removed by annealing. dissociation of the Si-O chain led to an increase in a ratio of the Si-O cage to Si-O (network). The removed of CH_x radicals and the increased Si-O_ (cage) to Si-O network (network) were for reducing the film density and dielectric constant.