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在富镓的未掺杂P型LEC-GaAs锭条的头部和尾部样品中,低温下(T≤40K)在低频区和高频区分别观察到两组红外吸收峰.在原生长的 LEC-GaAs 中所观察到的高频区红外吸收,经鉴定与在掺硅或中子辐照处理过的LEC-GaAs中所观测到的、电离能为200meV的受主吸收是一致的.除了从基态到2p_(5/2)(Γ_3)和2p_(5/2)(Γ_7)激发态电子跃迁所相应的吸收外,还观察到了可能与从基态到3p_(3/2)态跃迁相应的吸收峰.4K的光致发光光谱和变温霍尔测量,进一步证实了在未掺杂P型LEC-GaAs锭条中,从头部到尾部都存在电离能为78meV和200meV的双重受主,其浓度沿晶体生长方向(从头到尾)增大.实验结果进一步支持了双重受主是Ga_(As)反位缺陷所产生的看法.
Two groups of infrared absorption peaks were observed in the low-frequency and high-frequency regions at low temperature (T≤40K) in the head and tail sample of gallium-rich undoped P-type LEC-GaAs ingot.In the primary LEC- High-frequency infrared absorption observed in GaAs was identified as consistent with acceptor energy absorption of 200 meV as observed in LEC-GaAs doped with silicon or neutron radiation, except that the absorption from the ground state To absorption corresponding to 2p_ (5/2) (Γ_3) and 2p_ (5/2) (Γ_7) excited states, the corresponding absorption peaks possibly corresponding to transitions from the ground state to the 3p_ (3/2) state were also observed .4K photoluminescence spectroscopy and variable temperature Hall measurements further confirmed that in the undoped P-type LEC-GaAs ingot, from the head to the tail there are two ionization energy of 78meV and 200meV dual acceptor, the concentration along The crystal growth direction (from start to finish) increases.The experimental results further support the double acceptor is Ga_ (As) anti-bit defects arising from the view.