无显影气相光刻是我国首先发现的一项干法腐蚀技术。通过对其机理的不断研究发现，添加在光刻胶中的添加剂促进HF气体在高温下离解得到活性氟阴离子是刻蚀反应得以发生的首要条件和关键；曝光后成膜物结构变化对添加在其中的小分子诱蚀剂的栅栏作用是在曝光区与非曝光区形成反差的条件；图形的高分辨率与高纵宽比也得到了合理的解释。在机理研究的过程中，新的无显影气相光刻的方法（如高分子诱蚀剂及超强酸作为诱蚀剂的方法）得以发展及研究。 Non-developed photolithography is the first dry etching technology in our country. Through the continuous research of its mechanism, it is found that the addition of additives in the photoresist to promote the dissociation of HF gas at high temperature to obtain active fluoride anion is the first condition and key to the etching reaction; structural changes of the film after exposure to add Among them, the barrier effect of the small-molecule etchant is the contrast between the exposed area and the non-exposed area. The high resolution and the high aspect ratio of the pattern are also reasonably explained. In the course of mechanistic studies, new methods of photolithography without photolithography, such as polymer-based etchants and the use of superacids as the elicitors, have been developed and studied.