我们提出一种新型的表面肖特基栅的a-Si∶H静电感应晶体管.这种管子制备工艺简单,界面特性良好.计算机模拟结果表明,隙态密度和沟道宽度是影响管子性能的主要参量,当隙态密度为10~(16)cm~(-3)ev~(-1)时,电流开关效应达10~8,工作频率为几兆周. We propose a new type of a-Si: H electrostatic induction transistor with a surface-mounted Schottky barrier, which has a simple fabrication process and good interfacial properties. Computer simulation results show that the density of the gap and the channel width are the main parameters that affect the performance of the tube When the density of the gap is 10 ~ (16) cm ~ (-3) ev ~ (-1), the current switching effect reaches 10 ~ 8 and the operating frequency is several trillion cycles.