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用磁控溅射方法制备的ZnS薄膜作为有机发光器件(OLEDs)的空穴缓冲层,使典型结构的OLEDs(ITO/TPD/Alq/LiF/Al)的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5 nm时,器件的亮度增加了2倍多;当ZnS缓冲层厚度为5、10nm时,器件的发光电流效率增加40%。研究结果表明ZnS薄膜是一种好的缓冲层材料,它能够提高器件的发光效率,改善器件的稳定性。
The ZnS thin films prepared by magnetron sputtering are used as the hole buffer layer of organic light-emitting devices (OLEDs), and the luminescent properties of OLEDs (ITO / TPD / Alq / LiF / Al) with typical structures are improved. The experimental results of ZnS buffer layer thickness on device performance show that when the thickness of ZnS buffer layer is 5 nm, the brightness of the device increases more than two times. When the thickness of ZnS buffer layer is 5 and 10 nm, the luminescence current efficiency of the device increases by 40 %. The results show that the ZnS thin film is a good buffer layer material, which can improve the luminous efficiency of the device and improve the stability of the device.