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纳米钛氧化物忆阻器有望成为新一代阻性存储器基本单元并应用于辐射环境中的航天器控制及数据存储系统.辐射能量,强度,方向,持续时间等要素发生改变均可能对钛氧化物忆阻器受到的辐射损伤构成影响,然而,目前尚无相关具体研究.基于以蒙特卡洛方法为核心的SRIM仿真,本文针对宇宙射线主体组成部分——质子及α射线定量研究了各个辐射要素与钛氧化物忆阻器辐射损伤的关联,依据器件实测数据研究了辐射要素与导通阻抗,截止阻抗及氧空缺迁移率等忆阻器主要参数的关系,进一步利用SPICE仿真讨论了辐射对杂质漂移与隧道势垒共存特性的影响,从而为评估及降低钛氧化物忆阻器辐射损伤,提高器件应用于辐射环境的可靠性提供依据.
Nano titanium oxide memristor is expected to become a new generation of resistive memory basic unit and used in spacecraft radiation control environment and data storage systems.Radio energy, intensity, direction, duration and other elements are likely to change the titanium oxide However, there is no specific research at present.Based on the SRIM simulation with Monte Carlo method as the core, this paper studies the effects of various radiation elements And titanium oxide memristor radiation damage related to the device based on measured data to study the radiation elements and on-resistance, cut-off impedance and oxygen vacancy mobility memristor main parameters such as the relationship between the further use of SPICE simulation discussed the effects of radiation on impurities Drift and tunnel barrier coexistence characteristics of the impact, so as to evaluate and reduce the titanium oxide memristor radiation damage and improve the reliability of the device used in the radiation environment to provide the basis.