Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/GaAs buff
A simple modal analysis (MA) method to explain the diffraction process of 0th order nulled phase mask is presented. In MA, multiple reflections of the grating m
Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with g
A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor(DHBT).The cascode structure,low-loss matching