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全球半导体产业奉为真理的摩尔定律(Moore’sLaw)发展虽有面临瓶颈的挑战,然目前半导体业者仍积极发展新材料,并在制程微缩上加紧脚步,国研院国家纳米元件实验室便表示,“三角型锗鳍式电晶体”技术可克服硅基材上的锗通道缺陷问题,让半导体技术进入10纳米制程。半导体产业制程演进速度愈来愈快,英特尔(Intel)22纳米制程即将进入量产,台积电制程技术也进入28纳米,DRAM技术制程年底进入30纳米,2012年将进入20纳米世代,而NANDFlash产业制程在2011年则是26、27纳米制程,2012年将进入20、19纳米制程,半导体业者预计未来2、3年会进入14纳米制程时代。
Despite the bottleneck in the development of Moore’s Law, which is regarded as the truth of the global semiconductor industry, at present the semiconductor industry is still actively developing new materials and stepping up its manufacturing process. The National Institute of Nano-component Laboratory said , “Triangular germanium fin transistor ” technology can overcome the Germanium channel defects on the silicon substrate, so that semiconductor technology into the 10-nanometer process. Semiconductor industry process evolution faster and faster, Intel 22nm process is about to mass production, TSMC technology into the 28nm, DRAM technology into the 30nm end of the year, 2012 will enter the 20nm generation, NANDFlash industry process In 2011 it was 26,27 nanometer process, 2012 will enter the 20,19 nanometer process, the semiconductor industry is expected to enter the next two or three years 14-nanometer process era.