如果工艺问题得到解决,砷化镓肖特基势垒场效应晶体管就可实现高速。图1示出功率一增益与频率的关系曲线。预先进行测试,系统的误差约为±1分贝。频率达17千兆赫,预计 fmax(?)30千兆赫。这种晶体管的有源层为外延生长的砷化镓,它由镓/三氯化砷汽相工艺淀积而成。其厚度为0.27微米,n 型(掺硒)。迁移率μ=2600厘米~2/伏·秒,自由载流子浓度 n=6×10~(16)厘 If process issues are resolved, gallium arsenide Schottky barrier field effect transistors can achieve high speeds. Figure 1 shows the power of a gain and frequency curve. Pre-test, the system error of about ± 1 dB. Frequency up to 17 GHz, estimated fmax (?) 30 GHz. The active layer of this transistor is epitaxially grown gallium arsenide deposited from a gallium / arsenic trichloride vapor phase process. Its thickness is 0.27 microns, n-type (doped with selenium). Mobility μ = 2600 cm -2 / V · sec, free carrier concentration n = 6 × 10 ~ (16) PCT