论文部分内容阅读
化学机械抛光(CMP)工艺是IC工艺中大马士革工序的关键步骤。抛光液的电化学行为研究对抛光质量的控制具有重要意义。采用电化学测试手段,研究碱性抛光液中氧化剂(H_2O_2)对铜表面钝化膜的成膜影响,分析H_2O_2对抛光速率、表面粗糙度的影响机理。通过实验确定,在0.5%SiO_2磨料和3%表面活性剂的碱性抛光液中,添加0.5%的H_2O_2和3%的FA/OⅡ型螯合剂可获得大于800 nm/min的高抛光速率和表面粗糙度为22.2 nm的较佳平坦效果。
The chemical mechanical polishing (CMP) process is a key step in Damascus processes in IC processes. The study of the electrochemical behavior of polishing solution is of great importance to the control of polishing quality. The influence of H_2O_2 on the film formation of copper passivation film was studied by means of electrochemical test, and the influence mechanism of H_2O_2 on the polishing rate and surface roughness was analyzed. It was found experimentally that adding 0.5% H 2 O 2 and 3% FA / OⅡ chelating agent to 0.5% SiO 2 abrasive and 3% alkaline polishing solution can achieve higher polishing rate and surface than 800 nm / min A better flatness with a roughness of 22.2 nm.