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引言:随着砷化镓功率 FETI 艺的进展,在8千兆赫输出功率2.5瓦的器件,现在已经商品化了。然而,实现超过 X 波段具有足够增益和功率性能的器件仍然是困难的。在这些波段,一种新型的具有极其小的寄生电感和良好散热性能的砷化镓功率 FET 已经实现,改进了射频性能。已封装的器件得到了12千兆赫下4.1瓦和15千兆赫下2.5瓦的结果。器件结构:具有源电镀金属柱体和漏栅压点的芯片的电子扫描显微照片示于图1(a),每个单胞有1微米栅长和2400微米栅宽。栅宽的增加取决于对功率的要求。借
INTRODUCTION As the GaAs power FETI technology progresses, devices that output 2.5 W at 8 GHz have now been commercialized. However, achieving devices with sufficient gain and power performance beyond the X-band remains difficult. In these bands, a new GaAs power FET with extremely small parasitic inductance and good heat dissipation has been implemented to improve RF performance. The packaged device gave the result of 4.1 watts at 12 GHz and 2.5 watts at 15 GHz. Device Structure: An electron micrograph of a chip with a source plated metal pillar and a drain gate is shown in Figure 1 (a), with a 1 micron gate length per cell and a 2400 micron gate width. The increase in gate width depends on the power requirements. borrow