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利用光发射谱对电子增强热丝CVD金刚石薄膜的生长过程进行了原位检测,并实现空间分辨测量,系统地研究了衬底偏压、甲烷浓度、衬底温度等反应条件对原位光发射谱的影响,给出了有关反应基团空间分布及电子能量状态等对金刚石生长极其重要的信息,并同薄膜的生长进行了比较.结果表明甲烷浓度和衬底温度对金刚石膜生长的影响分别来自不同反应机制,提高原子氢的浓度,同时降低CH基团的浓度是生长优质金刚石膜所需的条件.
The growth of electron-enhanced hot-wire CVD diamond films was detected by optical emission spectra in situ and the spatial resolution was measured. The effects of reaction conditions such as substrate bias, methane concentration and substrate temperature on in-situ light emission The influence of the concentration of methane and the temperature of the substrate on the growth of diamond films was also compared with that of the diamond films From different reaction mechanisms to increase the concentration of atomic hydrogen while reducing the concentration of CH groups is the requirement for the growth of a high quality diamond film.