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基于单电子经典理论,本文通过分析得出了单岛单电子晶体管的源漏电导模型,并对其进行了详细的分析讨论.单岛单电子晶体管的源漏电导随着源漏电压的变化发生周期性的振荡衰减,并随着源漏电压的增大逐渐收敛于本征电导值.源漏电导的这种特性受温度、结电阻、结电容等参数的影响.分析结果表明,源漏电导分析模型对单电子晶体管的大规模应用具有非常重要的意义.
Based on the single-electron classical theory, this paper analyzes the source-drain conductance model of a single island single-electron transistor and analyzes it in detail.The source-drain conductance of single island single-electron transistor changes with the source-drain voltage Periodic oscillation decay, and gradually converge to the intrinsic conductance value as the source-drain voltage increases.The characteristics of the source-drain conductance are affected by parameters such as temperature, junction resistance, junction capacitance, etc. The results show that the source-drain conductance The analytical model is of great importance for the large-scale application of single-electron transistors.