论文部分内容阅读
研究基于简单解析表达式的电子背散射系数与入射电子能量、介质厚度和能损的关系及其对电子束辐射加工的影响。考虑到入射电子在多层介质之间反复的穿透和背散射，编制了ＥＤ４１０程序，计算了不同衬底材料和不同入射电子能量下能量沉积的深度分布和剂量因子。利用衬底材料的背散射抬高接近衬底界面处的剂量，较大地改善了辐射加工的均匀性。
The relationship between electron backscattering coefficient and incident electron energy, dielectric thickness and energy loss based on simple analytical expression and its effect on electron beam radiation processing are studied. Taking into account the repeated penetration and backscattering of incident electrons between multiple layers of media, an ED410 program has been programmed to calculate the depth distribution and dose factor of energy deposition for different substrate materials and different incident electron energies. The use of backscattering of the substrate material elevates the dose near the interface of the substrate, greatly improving the uniformity of the radiation processing.