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提出了一种特种器件厚外延前后图形的转移方法。通过设计一块带外延前图形层的对位标记和投影光刻机识别标记的掩膜版,解决了厚外延之前图形的精确套准和厚外延之后投影光刻的难题,实现了厚外延前后的套刻精度高于0.5μm。该方法可广泛应用于带埋层的VDMOS、超结VDMOS、高压互补双极器件,以及高压BCD器件的投影光刻。
A new method of transferring the pattern before and after thick epitaxy of special device is proposed. By designing a mask with a registration mark and a projection lithography machine with a pre-epitaxial front graphic layer, the problems of precise registration of the pattern before the thick epitaxy and projection lithography after the thick epitaxy are solved, Set the engraving accuracy higher than 0.5μm. The method can be widely applied to the projection lithography of buried VDMOS, super junction VDMOS, high voltage complementary bipolar devices, and high voltage BCD devices.