采用高真空 MOCVD外延技术 ,利用 TMA( Al( CH3) 3)和 O2 作为反应源 ,在 Si( 10 0 )衬底上外延生长γ-Al2 O3 绝缘膜形成 γ-Al2 O3/ Si异质结构材料 .同时 ,引入外延后退火工艺以便改善 γ-Al2 O3 薄膜的晶体质量及电学性能 .测试结果表明 ,通过在 O2 常压下的退火工艺可以有效地消除γ-Al2 O3 外延层的残余热应力及孪晶缺陷 ,改善外延层的晶体质量 ,同时可以提高 MOS电容的抗击穿能力 ,降低漏电电流 Γ-Al2 O3 / Si heterostructured materials were epitaxially grown on Si (100) substrates by high-vacuum MOCVD epitaxy using TMA (Al (CH3) 3) and O2 as reaction sources At the same time, the epitaxial annealing process is introduced to improve the crystal quality and electrical properties of γ-Al 2 O 3 thin films.The results show that the residual thermal stress of γ-Al 2 O 3 epitaxial layer can be effectively eliminated by the annealing process at atmospheric pressure Twin defects, improve the crystal quality of the epitaxial layer, at the same time can improve the anti-breakdown capacity of MOS capacitors, reduce leakage current