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由于兰宝石单晶用作电子器件的基片,并采用SOS(硅——兰宝石集成电路)工艺而引起了极大的注意。本文讨论了用EFG法(边缘限定的薄膜供料生长法)生成兰宝石及兰宝石在电子器件基片上的应用。由于兰宝石优良的物理性能,并被用作半
Since sapphire single crystal is used as a substrate for electronic devices and attracted attention by the SOS (silicon-sapphire integrated circuit) process. This article discusses the use of the EFG method (edge-limited film feed growth method) to produce sapphire and sapphire for use on electronic device substrates. Due to the excellent physical properties of sapphire, it is used as a semi