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用两种不同纯度的HfO2 材料与同一纯度的SiO2 材料组合 ,沉积λ/ 4规整膜系 (HL) 11H形成 2 6 6nm的紫外反射镜 ,发现反射率相差 0 .7%左右。用X光电子能谱法分析了高反膜中表层HfO2 中的成分 ,发现ZrO2 的含量相差一个数量级左右。为确定形成这种差别的原因 ,用辉光放电质谱法测定了这两种HfO2 材料中锆 (Zr)及其钛(Ti)、铁 (Fe)的含量 ,发现Zr是其中的最主要的杂质 ,两种HfO2 材料中Zr含量有一个数量级的差别。说明在 2 6 6nm波段 ,HfO2 中ZrO2 的含量会对HfO2 /SiO2 高反膜的反射率造成影响。根据HfO2 单层膜的光谱曲线 ,推算出了这两种材料的消光系数的差别 ,并用Tfcalc膜系设计软件进行理论和镀制结果的模拟 ,得到与实验测试一致的结果。
Using two kinds of HfO2 materials of different purities combined with the same purity of SiO2 material, the λ / 4 regular film system (HL) 11H was deposited to form a 266nm UV mirror and the reflectance difference was found to be about 0.7%. X-ray photoelectron spectroscopy was used to analyze the composition of the surface HfO2 in the high-contrast film. It was found that the content of ZrO2 was about one order of magnitude lower. To determine the cause of this difference, the content of zirconium (Zr), its titanium (Ti) and iron (Fe) in these two HfO2 materials were determined by glow discharge mass spectrometry and found to be the most important impurity There is an order of magnitude difference in Zr content between the two HfO2 materials. This indicates that the content of ZrO2 in HfO2 will influence the reflectivity of HfO2 / SiO2 high reflection film at 266nm. According to the spectral curve of HfO2 monolayer, the difference of extinction coefficient between the two materials was deduced. The theoretical and experimental results were simulated by Tfcalc film design software, and the results were consistent with the experimental results.